Effects of rapid thermal annealing on GaAs1-xBix alloys

First Principles Study on Electronic Structure and Optical Properties of Ternary GaAs:Bi Alloy

The electronic structure and optical properties of ternary GaAs:Bi alloy are investigated by first principles calculations. It is found that the band gap of GaAs1-xBix decreases monotonously with the increasing of Bi concentration, resulting in the fundamental absorption edge and main absorption peaks of GaAs1-xBix shifting toward lower energy with the increase of the Bi content. The optical co...

Giant spin-orbit bowing in GaAs1-xBix.

We report a giant bowing of the spin-orbit splitting energy Delta0 in the dilute GaAs1-xBix alloy for Bi concentrations ranging from 0% to 1.8%. This is the first observation of a large relativistic correction to the host electronic band structure induced by just a few percent of isoelectronic doping in a semiconductor material. It opens up the possibility of tailoring the spin-orbit splitting ...

Unexpected Bismuth Concentration Profiles in MOVPE GaAs1-xBix Films Revealed by HAADF STEM Imaging

Recent interest in the growth of GaAs1-xBix semiconductor alloys with controlled Bi concentration has been stimulated by the sensitivity of the bandgap energy and valence band structure to Bi concentration, x. These sensitivities offer the possibility to engineer both the band gap and band offsets at junctions to improve the performance of devices. Realization of this potential, however, requir...

Compositional evolution of Bi-induced acceptor states in GaAs1−xBix alloy

Electronic Structure of Dilute Bismide Alloys

The dilute bismide semiconductor GaAs1-xBix represents an interesting counterpart of the dilute nitride alloy GaAs1-xNx. Both exhibit giant bandgap bowing phenomena but with oppositely directed effects on the valence and conduction bands respectively. The optical properties of the dilute bismide alloy will be contrasted with those of the dilute nitride and the similarities and distinctions betw...